新聞資訊
連接溫度對(duì)GH4169合金TLP接頭界面組織和性能的影響
發(fā)布人：上海艾荔艾金屬材料有限公司bt990.com.cn
更新時(shí)間：2015-10-21
采用50 μm厚的Ni82CrSiB非晶箔片為中間層，通過(guò)瞬時(shí)液相擴(kuò)散連接(TLP)方法實(shí)現(xiàn)GH4169合金的連接。研究TLP接頭的界面組織結(jié)構(gòu), 重點(diǎn)分析連接溫度對(duì)接頭界面組織和力學(xué)性能的影響規(guī)律。
連接溫度對(duì)GH4169合金TLP接頭界面組織和性能的影響Effect of bonding temperature on interfacial microstructure and properties of GH4169 alloy TLP joints
采用50 μm厚的Ni82CrSiB非晶箔片為中間層，通過(guò)瞬時(shí)液相擴(kuò)散連接(TLP)方法實(shí)現(xiàn)GH4169合金的連接。研究TLP接頭的界面組織結(jié)構(gòu), 重點(diǎn)分析連接溫度對(duì)接頭界面組織和力學(xué)性能的影響規(guī)律。結(jié)果表明：GH4169合金TLP接頭由等溫凝固區(qū)(ISZ)和擴(kuò)散區(qū)(DZ)組成。等溫凝固區(qū)為單相鎳基固溶體，B元素向母材的擴(kuò)散導(dǎo)致在擴(kuò)散區(qū)內(nèi)晶界處形成大量的針棒狀硼化物。隨著連接溫度的升高，擴(kuò)散區(qū)厚度逐漸增加，而等溫凝固區(qū)厚度基本保持不變。當(dāng)連接溫度為1 120 ℃、連接時(shí)間為2 h時(shí)，接頭室溫及高溫(600 ℃)抗拉強(qiáng)度最高，分別為692和599 MPa，為母材強(qiáng)度的82%和71%。斷口分析結(jié)果表明：隨連接溫度的升高，室溫拉伸時(shí)接頭斷裂位置由等溫凝固區(qū)逐漸轉(zhuǎn)向擴(kuò)散區(qū)，而高溫拉伸時(shí)接頭均在等溫凝固區(qū)發(fā)生斷裂。
The bonding of GH4169 superalloy was achieved by transient liquid phase (TLP) bonding method using 50 μm-thick Ni82CrSiB amorphous foil as the interlayer. The interfacial microstructure of TLP joint was characterized and the effect of bonding temperature on the interfacial microstructure and joining properties was investigated in details. The results show that the GH4169 TLP joint consists of isothermal solidification zone (ISZ) and diffusion zone (DZ). The ISZ is composed of Ni-based solid solution, and lots of needle-like borides are formed at the grain boundaries in DZ due to the diffusion of element B into GH4169 substrate. With the increase of bonding temperature, the thickness of DZ increases while that of ISZ remains unchanged. The highest tensile strength at room temperature and high temperature reaches 692 and 599 MPa when the joint is bonded at 1 120 ℃ for 2 h, which is about 82% and 71% of the base metal strength, respectively. The fracture analysis results show that the fracture location changes from ISZ to DZ during room temperature tensile test with the increase of bonding temperature. However, when tested at high temperature, the facture always occurs at ISZ.
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